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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > IPG16N10S4L61AATMA1
Infineon Technologies

IPG16N10S4L61AATMA1

Manufacturer Part Number IPG16N10S4L61AATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET 2N-CH 100V 16A 8TDSON
Package PG-TDSON-8-10
In Stock 204775 pcs
Data sheet Part Number GuideMult Dev Reel Design Chg 2/Dec/2019Mult Dev Pkg Box Chg 3/Jan/2018Mult Dev Assembly Chg 4/Oct/2018
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.443 $0.396 $0.309 $0.255 $0.201 $0.188
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.1V @ 90µA
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TDSON-8-10
Series Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs 61mOhm @ 16A, 10V
Power - Max 29W
Package / Case 8-PowerVDFN
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount, Wettable Flank
Input Capacitance (Ciss) (Max) @ Vds 845pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 16A
Configuration 2 N-Channel (Dual)
Base Product Number IPG16N10

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IPG16N10S4L61AATMA1 Datasheet PDF

Data sheet