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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD50R399CPATMA1
Infineon Technologies

IPD50R399CPATMA1

Manufacturer Part Number IPD50R399CPATMA1
Manufacturer Infineon Technologies
Detailed Description LOW POWER_LEGACY
Package PG-TO252-3-313
In Stock 94344 pcs
Data sheet Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018Mult Dev Leadframe Chgs 9/Jun/2020Mult Dev Leadframe Rev 30/Jun/2020
Reference Price (In US Dollars)
2500 5000
$0.426 $0.41
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.5V @ 330µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3-313
Series CoolMOS™ CP
Rds On (Max) @ Id, Vgs 399mOhm @ 4.9A, 10V
Power Dissipation (Max) 83W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Base Product Number IPD50R

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IPD50R399CPATMA1 Datasheet PDF

Data sheet