IPD50N12S3L15ATMA1
| Manufacturer Part Number | IPD50N12S3L15ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Detailed Description | MOSFET N-CHANNEL_100+ |
| Package | PG-TO252-3-11 |
| In Stock | 6606 pcs |
| Data sheet | Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018Mult Dev EOL 30/Sep/2022Wafer Test Add 27/Apr/2017 |
Reference Price (In US Dollars)
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 2.4V @ 60µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PG-TO252-3-11 |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 50A, 10V |
| Power Dissipation (Max) | 100W (Tc) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 7180 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 120 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Base Product Number | IPD50 |
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