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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD068P03L3GBTMA1
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IPD068P03L3GBTMA1

Manufacturer Part Number IPD068P03L3GBTMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET P-CH 30V 70A TO252-3
Package PG-TO252-3
In Stock 5429 pcs
Data sheet Part Number GuideCover Tape Width Update 17/Jun/2015Mult Dev Pkg Box Chg 3/Jan/2018Halogen Free Upgrade 22/Aug/2013
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2V @ 150µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3
Series OptiMOS™
Rds On (Max) @ Id, Vgs 6.8mOhm @ 70A, 10V
Power Dissipation (Max) 100W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 7720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Base Product Number IPD068P

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IPD068P03L3GBTMA1 Datasheet PDF

Data sheet

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