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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD048N06L3GATMA1
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IPD048N06L3GATMA1

Manufacturer Part Number IPD048N06L3GATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 60V 90A TO252-3
Package PG-TO252-3-311
In Stock 155102 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100 500 1000
$0.513 $0.458 $0.357 $0.295 $0.233
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.2V @ 58µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3-311
Series OptiMOS™
Rds On (Max) @ Id, Vgs 4.8mOhm @ 90A, 10V
Power Dissipation (Max) 115W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Base Product Number IPD048N

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