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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB80N06S2L07ATMA1
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IPB80N06S2L07ATMA1

Manufacturer Part Number IPB80N06S2L07ATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 55V 80A TO263-3
Package PG-TO263-3-2
In Stock 6469 pcs
Data sheet Part Number GuideWafer Fab/Test Site Addition 16/Oct/2014
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2V @ 150µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-3-2
Series OptiMOS™
Rds On (Max) @ Id, Vgs 6.7mOhm @ 60A, 10V
Power Dissipation (Max) 210W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 3160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Base Product Number IPB80N

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IPB80N06S2L07ATMA1 Datasheet PDF

Data sheet

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