IPB80N04S3H4ATMA1
Manufacturer Part Number | IPB80N04S3H4ATMA1 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | MOSFET N-CH 40V 80A TO263-3 |
Package | PG-TO263-3-2 |
In Stock | 6177 pcs |
Data sheet | IPx80N04S3-H4Part Number GuideMult Device EOL 31/Aug/2017Mult Dev Wafer Fab 12/Feb/2019 |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4V @ 65µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO263-3-2 |
Series | OptiMOS™ |
Rds On (Max) @ Id, Vgs | 4.5mOhm @ 80A, 10V |
Power Dissipation (Max) | 115W (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Base Product Number | IPB80N |
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