IPB136N08N3GATMA1
Manufacturer Part Number | IPB136N08N3GATMA1 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | N-CHANNEL POWER MOSFET |
Package | PG-TO263-3 |
In Stock | 205684 pcs |
Data sheet |
Reference Price (In US Dollars)
611 |
---|
$0.194 |
Delivery Time
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RFQ Email: info@Components-House.net
Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 3.5V @ 33µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO263-3 |
Series | OptiMOS™3 |
Rds On (Max) @ Id, Vgs | 13.9mOhm @ 45A, 10V |
Power Dissipation (Max) | 79W (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Package | Bulk |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 40 V |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Drain to Source Voltage (Vdss) | 80 V |
Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
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