IPB120N04S302ATMA1
| Manufacturer Part Number | IPB120N04S302ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Detailed Description | N-CHANNEL POWER MOSFET |
| Package | PG-TO263-3-2 |
| In Stock | 4856 pcs |
| Data sheet |
Reference Price (In US Dollars)
Delivery Time
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RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 230µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PG-TO263-3-2 |
| Series | OptiMOS® |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 80A, 10V |
| Power Dissipation (Max) | 300W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Package | Bulk |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 14300 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
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