IMYH200R024M1HXKSA1
Manufacturer Part Number | IMYH200R024M1HXKSA1 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | SIC DISCRETE |
Package | PG-TO247-4-U04 |
In Stock | 1082 pcs |
Data sheet |
Reference Price (In US Dollars)
1 | 10 | 100 |
---|---|---|
$36.903 | $34.997 | $31.664 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 5.5V @ 24mA |
Vgs (Max) | +20V, -7V |
Technology | SiC (Silicon Carbide Junction Transistor) |
Supplier Device Package | PG-TO247-4-U04 |
Series | CoolSiC™ |
Rds On (Max) @ Id, Vgs | 33mOhm @ 40A, 18V |
Power Dissipation (Max) | 576W (Tc) |
Package / Case | TO-247-4 |
Package | Tube |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Gate Charge (Qg) (Max) @ Vgs | 137 nC @ 18 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
Drain to Source Voltage (Vdss) | 2000 V |
Current - Continuous Drain (Id) @ 25°C | 89A (Tc) |
Base Product Number | IMYH200 |
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