IMYH200R012M1HXKSA1
| Manufacturer Part Number | IMYH200R012M1HXKSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Detailed Description | SIC DISCRETE |
| Package | PG-TO247-4-U04 |
| In Stock | 692 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 1 | 10 |
|---|---|
| $68.952 | $66.036 |
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Infineon Technologies series electronic components. We have 692 pieces of Infineon Technologies IMYH200R012M1HXKSA1 in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
RFQ Email: info@Components-House.net
RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 5.5V @ 48mA |
| Vgs (Max) | +20V, -7V |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Supplier Device Package | PG-TO247-4-U04 |
| Series | CoolSiC™ |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 60A, 18V |
| Power Dissipation (Max) | 552W (Tc) |
| Package / Case | TO-247-4 |
| Package | Tube |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Gate Charge (Qg) (Max) @ Vgs | 246 nC @ 18 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Drain to Source Voltage (Vdss) | 2000 V |
| Current - Continuous Drain (Id) @ 25°C | 123A (Tc) |
| Base Product Number | IMYH200 |
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