IGT60R070D1E8220ATMA1
| Manufacturer Part Number | IGT60R070D1E8220ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Detailed Description | GAN HV |
| Package | PG-HSOF-8-3 |
| In Stock | 6112 pcs |
| Data sheet |
Reference Price (In US Dollars)
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 1.6V @ 2.6mA |
| Vgs (Max) | -10V |
| Technology | GaNFET (Gallium Nitride) |
| Supplier Device Package | PG-HSOF-8-3 |
| Rds On (Max) @ Id, Vgs | - |
| Power Dissipation (Max) | 125W (Tc) |
| Package / Case | 8-PowerSFN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 400 V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
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