IGT60R070D1ATMA1
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
1.6V @ 2.6mA
Vgs (Max)
-10V
Technology
GaNFET (Gallium Nitride)
Supplier Device Package
PG-HSOF-8-3
Series
CoolGaN™
Rds On (Max) @ Id, Vgs
-
Power Dissipation (Max)
125W (Tc)
Package / Case
8-PowerSFN
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
380 pF @ 400 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
-
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Base Product Number
IGT60R070
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IGT60R070D1ATMA1 Datasheet PDF
Data sheet
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