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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > F4100R12KS4BOSA1
Infineon Technologies

F4100R12KS4BOSA1

Manufacturer Part Number F4100R12KS4BOSA1
Manufacturer Infineon Technologies
Detailed Description IGBT MOD 1200V 130A 660W
Package Module
In Stock 397 pcs
Data sheet
Reference Price (In US Dollars)
1 10 30
$92.073 $88.182 $86.236
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 3.75V @ 15V, 100A
Supplier Device Package Module
Series -
Power - Max 660 W
Package / Case Module
Package Tray
Operating Temperature -40°C ~ 125°C
NTC Thermistor Yes
Product Attribute Attribute Value
Mounting Type Chassis Mount
Input Capacitance (Cies) @ Vce 6.8 nF @ 25 V
Input Standard
IGBT Type -
Current - Collector Cutoff (Max) 5 mA
Current - Collector (Ic) (Max) 130 A
Configuration Three Phase Inverter
Base Product Number F4100R

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F4100R12KS4BOSA1 Datasheet PDF