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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > F411MR12W2M1B76BOMA1
Infineon Technologies

F411MR12W2M1B76BOMA1

Manufacturer Part Number F411MR12W2M1B76BOMA1
Manufacturer Infineon Technologies
Detailed Description LOW POWER EASY AG-EASY2B-2
Package AG-EASY1B-2
In Stock 275 pcs
Data sheet
Reference Price (In US Dollars)
1
$140.694
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 5.55V @ 40mA
Supplier Device Package AG-EASY1B-2
Rds On (Max) @ Id, Vgs 11.3mOhm @ 100A, 15V
Power - Max -
Package / Case Module
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Product Attribute Attribute Value
Input Capacitance (Ciss) (Max) @ Vds 7.36nF @ 800V
Gate Charge (Qg) (Max) @ Vgs 248nC @ 15V
FET Type 4 N-Channel (Half Bridge)
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 100A (Tj)

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F411MR12W2M1B76BOMA1 Datasheet PDF