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BSP298H6327XUSA1
Reference Price (In US Dollars)
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 1mA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
PG-SOT223-4
Series
SIPMOS®
Rds On (Max) @ Id, Vgs
3Ohm @ 500mA, 10V
Power Dissipation (Max)
1.8W (Ta)
Package / Case
TO-261-4, TO-261AA
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)
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BSP298H6327XUSA1 Datasheet PDF
Data sheet
Datasheet File Browse