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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSP295E6327T
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BSP295E6327T

Manufacturer Part Number BSP295E6327T
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 60V 1.8A SOT223-4
Package PG-SOT223-4
In Stock 4410 pcs
Data sheet Part Number Guide
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 1.8V @ 400µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-SOT223-4
Series SIPMOS®
Rds On (Max) @ Id, Vgs 300mOhm @ 1.8A, 10V
Power Dissipation (Max) 1.8W (Ta)
Package / Case TO-261-4, TO-261AA
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 368 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)

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BSP295E6327T Datasheet PDF

Data sheet

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