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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSC886N03LSGATMA1
Infineon Technologies

BSC886N03LSGATMA1

Manufacturer Part Number BSC886N03LSGATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 30V 13A/65A TDSON
Package PG-TDSON-8-1
In Stock 6685 pcs
Data sheet BSC886N03LS GPart Number GuideMult Dev Reel Design Chg 2/Dec/2019Mult Dev Pkg Box Chg 3/Jan/2018Mult Dev EOL 23/Sep/2022Multiple Changes 09/Jul/2014Assembly Site Update 26/Jul/2016
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.2V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TDSON-8-1
Series OptiMOS™
Rds On (Max) @ Id, Vgs 6mOhm @ 30A, 10V
Power Dissipation (Max) 2.5W (Ta), 39W (Tc)
Package / Case 8-PowerTDFN
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 65A (Tc)
Base Product Number BSC886

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BSC886N03LSGATMA1 Datasheet PDF

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