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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > BSC750N10NDGATMA1
Infineon Technologies

BSC750N10NDGATMA1

Manufacturer Part Number BSC750N10NDGATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET 2N-CH 100V 3.2A 8TDSON
Package PG-TDSON-8-4
In Stock 5104 pcs
Data sheet BSC750N10ND GPart Number GuideMult Dev Reel Design Chg 2/Dec/2019Mult Dev Pkg Box Chg 3/Jan/2018Mult Devices EOL 08/May/2019
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 12µA
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TDSON-8-4
Series OptiMOS™
Rds On (Max) @ Id, Vgs 75mOhm @ 13A, 10V
Power - Max 26W
Package / Case 8-PowerVDFN
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3.2A
Configuration 2 N-Channel (Dual)
Base Product Number BSC750N10

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BSC750N10NDGATMA1 Datasheet PDF

Data sheet