NVD5862NT4G
| Manufacturer Part Number | NVD5862NT4G |
|---|---|
| Manufacturer | onsemi |
| Detailed Description | MOSFET N-CH 60V 18A/98A DPAK |
| Package | DPAK |
| In Stock | 6080 pcs |
| Data sheet | Mult Dev EOL 16/Jul/2019Mult Dev EOL 24/Jul/2019Mult Dev EOL 06/Oct/2021onsemi RoHSWafer Fab Capacity 27/Jul/2020Mold Compound Revision 24/Apr/2015Mold Compound Update 25/Feb/2015NVD5862N |
Reference Price (In US Dollars)
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | DPAK |
| Series | Automotive, AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 48A, 10V |
| Power Dissipation (Max) | 4.1W (Ta), 115W (Tc) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 98A (Tc) |
| Base Product Number | NVD586 |
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