NVD5117PLT4G
Manufacturer Part Number | NVD5117PLT4G |
---|---|
Manufacturer | onsemi |
Detailed Description | MOSFET P-CH 60V 11A/61A DPAK |
Package | DPAK |
In Stock | 5274 pcs |
Data sheet | Mult Dev EOL 24/Jul/2019onsemi REACHonsemi RoHSNVD5117PL |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | DPAK |
Series | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs | 16mOhm @ 29A, 10V |
Power Dissipation (Max) | 4.1W (Ta), 118W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 61A (Tc) |
Base Product Number | NVD511 |
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