NTH4L060N090SC1
| Manufacturer Part Number | NTH4L060N090SC1 |
|---|---|
| Manufacturer | onsemi |
| Detailed Description | SILICON CARBIDE MOSFET, NCHANNEL |
| Package | TO-247-4L |
| In Stock | 8907 pcs |
| Data sheet | onsemi REACHonsemi RoHSMultiple changes 15-Feb-2022NTH4L060N090SC1 |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 |
|---|---|---|---|---|
| $6.246 | $5.742 | $4.85 | $4.314 | $3.957 |
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4.3V @ 5mA |
| Vgs (Max) | +22V, -8V |
| Technology | SiCFET (Silicon Carbide) |
| Supplier Device Package | TO-247-4L |
| Series | - |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 20A, 18V |
| Power Dissipation (Max) | 221W (Tc) |
| Package / Case | TO-247-4 |
| Package | Tube |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 15 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
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