NTH4L025N065SC1
Manufacturer Part Number | NTH4L025N065SC1 |
---|---|
Manufacturer | onsemi |
Detailed Description | SILICON CARBIDE (SIC) MOSFET - 1 |
Package | TO-247-4L |
In Stock | 6160 pcs |
Data sheet | NTH4L025N065SC1 |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 |
---|---|---|---|
$9.239 | $8.519 | $7.275 | $6.605 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4.3V @ 15.5mA |
Vgs (Max) | +22V, -8V |
Technology | SiCFET (Silicon Carbide) |
Supplier Device Package | TO-247-4L |
Series | - |
Rds On (Max) @ Id, Vgs | 28.5mOhm @ 45A, 18V |
Power Dissipation (Max) | 348W (Tc) |
Package / Case | TO-247-4 |
Package | Tube |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 3480 pF @ 15 V |
Gate Charge (Qg) (Max) @ Vgs | 164 nC @ 18 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 99A (Tc) |
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