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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTH4L025N065SC1
onsemi

NTH4L025N065SC1

Manufacturer Part Number NTH4L025N065SC1
Manufacturer onsemi
Detailed Description SILICON CARBIDE (SIC) MOSFET - 1
Package TO-247-4L
In Stock 6160 pcs
Data sheet NTH4L025N065SC1
Reference Price (In US Dollars)
1 10 100 500
$9.239 $8.519 $7.275 $6.605
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4.3V @ 15.5mA
Vgs (Max) +22V, -8V
Technology SiCFET (Silicon Carbide)
Supplier Device Package TO-247-4L
Series -
Rds On (Max) @ Id, Vgs 28.5mOhm @ 45A, 18V
Power Dissipation (Max) 348W (Tc)
Package / Case TO-247-4
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 3480 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 164 nC @ 18 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 99A (Tc)

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NTH4L025N065SC1 Datasheet PDF

Data sheet