FQU2N100TU
Reference Price (In US Dollars)
1
10
100
500
1000
2000
5000
10000
$0.604
$0.539
$0.42
$0.347
$0.274
$0.256
$0.243
$0.234
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
5V @ 250µA
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
I-PAK
Series
QFET®
Rds On (Max) @ Id, Vgs
9Ohm @ 800mA, 10V
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Package
Tube
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
15.5 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
1.6A (Tc)
Base Product Number
FQU2N100
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Data sheet
Datasheet File Browse
