FQU13N06LTU-WS
Manufacturer Part Number | FQU13N06LTU-WS |
---|---|
Manufacturer | onsemi |
Detailed Description | MOSFET N-CH 60V 11A IPAK |
Package | I-PAK |
In Stock | 295827 pcs |
Data sheet | Mult Device Part Number Chg 30/May/2017Logo 17/Aug/2017Mult Devices 24/Oct/2017Mult Dev EOL 30/Jun/2022onsemi RoHSMult Dev Site Add 14/Oct/2020FQD13N06 22/Jul/2016 |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 | 2000 | 5000 | 10000 |
---|---|---|---|---|---|---|---|
$0.412 | $0.367 | $0.286 | $0.237 | $0.187 | $0.174 | $0.166 | $0.159 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | I-PAK |
Series | QFET® |
Rds On (Max) @ Id, Vgs | 115mOhm @ 5.5A, 10V |
Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Package | Tube |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 5 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Base Product Number | FQU13N06 |
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