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FQD19N10TM_F080
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±25V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-252AA
Series
QFET®
Rds On (Max) @ Id, Vgs
100mOhm @ 7.8A, 10V
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
15.6A (Tc)
Base Product Number
FQD1
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FQD19N10TM_F080 Datasheet PDF
Data sheet
Datasheet File Browse
