FQD19N10TM
Manufacturer Part Number | FQD19N10TM |
---|---|
Manufacturer | onsemi |
Detailed Description | MOSFET N-CH 100V 15.6A DPAK |
Package | TO-252AA |
In Stock | 242693 pcs |
Data sheet | Tape and Box/Reel Barcode Update 07/Aug/2014Description Chg 01/Apr/2016Logo 17/Aug/2017Mult Devices 24/Oct/2017Mult Dev EOL 30/Jun/2022onsemi RoHSMult Dev 13/Aug/2020FQD19N10 |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$0.331 | $0.297 | $0.232 | $0.191 | $0.151 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±25V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-252AA |
Series | QFET® |
Rds On (Max) @ Id, Vgs | 100mOhm @ 7.8A, 10V |
Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 15.6A (Tc) |
Base Product Number | FQD19N10 |
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