Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3.5V @ 5mA
Vgs (Max)
+18V, -8V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
TO-247-3
Series
Automotive, AEC-Q101, E
RoHS Status
RoHS Compliant
Rds On (Max) @ Id, Vgs
84.5 mOhm @ 20A, 15V
Power Dissipation (Max)
125W (Tc)
Packaging
Tube
Package / Case
TO-247-3
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds
660pF @ 600V
Gate Charge (Qg) (Max) @ Vgs
30.4nC @ 15V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
15V
Drain to Source Voltage (Vdss)
900V
Detailed Description
N-Channel 900V 35A (Tc) 125W (Tc) Through Hole TO-247-3
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Recommended Products
E3M0060065K60M 650V SIC AUTOMOTIVE MOSFETWolfspeed, Inc.
