Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 1mA
Vgs (Max)
+25V, -5V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
TO-247-3
Series
Z-FET™
Rds On (Max) @ Id, Vgs
110 mOhm @ 20A, 20V
Power Dissipation (Max)
215W (Tc)
Packaging
Tube
Package / Case
TO-247-3
Operating Temperature
-55°C ~ 135°C (TJ)
Mounting Type
Through Hole
Product Attribute
Attribute Value
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds
1915pF @ 800V
Gate Charge (Qg) (Max) @ Vgs
90.8nC @ 20V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
20V
Drain to Source Voltage (Vdss)
1200V
Detailed Description
N-Channel 1200V 42A (Tc) 215W (Tc) Through Hole TO-247-3
