Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3.9V @ 17mA
Technology
Silicon Carbide (SiC)
Supplier Device Package
-
Series
-
Rds On (Max) @ Id, Vgs
28.9mOhm @ 30A, 15V
Power - Max
10mW
Package / Case
Module
Package
Box
Operating Temperature
-40°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds
5400pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs
162nC @ 15V
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
50A (Tj)
Configuration
4 N-Channel (Full Bridge)
Base Product Number
CBB021
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