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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > WNSC04650T6J
WeEn Semiconductors

WNSC04650T6J

Manufacturer Part Number WNSC04650T6J
Manufacturer WeEn Semiconductors
Detailed Description DIODE SIL CARBIDE 650V 4A 5DFN
Package 5-DFN (8x8)
In Stock 87561 pcs
Data sheet Diodes 1-20-23Mult Dev Site Add 23/Sep/2021WNSC04650T
Reference Price (In US Dollars)
3000
$0.371
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Specifications

Product Attribute Attribute Value
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A
Voltage - DC Reverse (Vr) (Max) 650 V
Technology SiC (Silicon Carbide) Schottky
Supplier Device Package 5-DFN (8x8)
Speed No Recovery Time > 500mA (Io)
Series -
Reverse Recovery Time (trr) 0 ns
Package / Case 4-VSFN Exposed Pad
Product Attribute Attribute Value
Package Tape & Reel (TR)
Operating Temperature - Junction 175°C (Max)
Mounting Type Surface Mount
Current - Reverse Leakage @ Vr 25 µA @ 650 V
Current - Average Rectified (Io) 4A
Capacitance @ Vr, F 141pF @ 1V, 1MHz
Base Product Number WNSC0

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WNSC04650T6J Datasheet PDF

Data sheet