SUD35N10-26P-GE3
Manufacturer Part Number | SUD35N10-26P-GE3 |
---|---|
Manufacturer | Vishay Siliconix |
Detailed Description | MOSFET N-CH 100V 35A TO252 |
Package | TO-252AA |
In Stock | 88255 pcs |
Data sheet | SUD35N10-26P |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$0.811 | $0.73 | $0.587 | $0.482 | $0.399 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4.4V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-252AA |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 26mOhm @ 12A, 10V |
Power Dissipation (Max) | 8.3W (Ta), 83W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 12 V |
Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Base Product Number | SUD35 |
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