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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SQUN702E-T1_GE3
Vishay Siliconix

SQUN702E-T1_GE3

Manufacturer Part Number SQUN702E-T1_GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N&P-CH COMMON DRAIN
Package Die
In Stock 52801 pcs
Data sheet Process Change 11/Apr/2023SQUN702E
Reference Price (In US Dollars)
1 10 100 500 1000
$1.362 $1.224 $1.003 $0.854 $0.72
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA, 3.5V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package Die
Series Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Power - Max 48W (Tc), 60W (Tc)
Package / Case Die
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount, Wettable Flank
Input Capacitance (Ciss) (Max) @ Vds 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
FET Feature -
Drain to Source Voltage (Vdss) 40V, 200V
Current - Continuous Drain (Id) @ 25°C 30A (Tc), 20A (Tc)
Configuration N and P-Channel, Common Drain
Base Product Number SQUN702

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SQUN702E-T1_GE3 Datasheet PDF

Data sheet