SQS966ENW-T1_GE3
| Manufacturer Part Number | SQS966ENW-T1_GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Detailed Description | MOSFET N-CHAN 60V |
| Package | PowerPAK® 1212-8W Dual |
| In Stock | 229147 pcs |
| Data sheet | SQS966ENW |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 |
|---|---|---|---|---|
| $0.401 | $0.36 | $0.281 | $0.232 | $0.183 |
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® 1212-8W Dual |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 1.25A, 10V |
| Power - Max | 27.8W (Tc) |
| Package / Case | PowerPAK® 1212-8W Dual |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount, Wettable Flank |
| Input Capacitance (Ciss) (Max) @ Vds | 572pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 10V |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Configuration | 2 N-Channel (Dual) |
| Base Product Number | SQS966 |
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