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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SQJQ900E-T1_GE3
Vishay Siliconix

SQJQ900E-T1_GE3

Manufacturer Part Number SQJQ900E-T1_GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET 2 N-CH 40V POWERPAK8X8
Package PowerPAK® 8 x 8 Dual
In Stock 89309 pcs
Data sheet SQJQ900E Datasheet
Reference Price (In US Dollars)
2000
$0.494
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® 8 x 8 Dual
Series Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs 3.9mOhm @ 20A, 10V
Power - Max 75W
Package / Case PowerPAK® 8 x 8 Dual
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 5900pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Configuration 2 N-Channel (Dual)
Base Product Number SQJQ900

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SQJQ900E-T1_GE3 Datasheet PDF

Data sheet