SQD19P06-60L_GE3
Manufacturer Part Number | SQD19P06-60L_GE3 |
---|---|
Manufacturer | Vishay Siliconix |
Detailed Description | MOSFET P-CH 60V 20A TO252 |
Package | TO-252AA |
In Stock | 117514 pcs |
Data sheet | SQD19P06-60LAdditional Backmetal Capability 12/APR/2023New Ordering Code 19/Mar/2015 |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$0.652 | $0.583 | $0.455 | $0.376 | $0.297 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-252AA |
Series | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs | 55mOhm @ 19A, 10V |
Power Dissipation (Max) | 46W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 1490 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Base Product Number | SQD19 |
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