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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SQD19P06-60L_GE3
Vishay Siliconix

SQD19P06-60L_GE3

Manufacturer Part Number SQD19P06-60L_GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET P-CH 60V 20A TO252
Package TO-252AA
In Stock 117514 pcs
Data sheet SQD19P06-60LAdditional Backmetal Capability 12/APR/2023New Ordering Code 19/Mar/2015
Reference Price (In US Dollars)
1 10 100 500 1000
$0.652 $0.583 $0.455 $0.376 $0.297
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-252AA
Series Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs 55mOhm @ 19A, 10V
Power Dissipation (Max) 46W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Base Product Number SQD19

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SQD19P06-60L_GE3 Datasheet PDF

Data sheet