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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SQ2309ES-T1_BE3
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SQ2309ES-T1_BE3

Manufacturer Part Number SQ2309ES-T1_BE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET P-CH 60V 1.7A SOT23-3
Package SOT-23-3 (TO-236)
In Stock 453834 pcs
Data sheet SQ2309ES Test/DS Chgs 14/Jul/2021SQ2309ES-T1_(G,B)E3 Datasheet Correction 14/Jul/20
Reference Price (In US Dollars)
1 10 100 500 1000
$0.253 $0.218 $0.163 $0.128 $0.099
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-23-3 (TO-236)
Series Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs 335mOhm @ 1.25A, 10V
Power Dissipation (Max) 2W (Tc)
Package / Case TO-236-3, SC-59, SOT-23-3
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 10 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
Base Product Number SQ2309

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SQ2309ES-T1_BE3 Datasheet PDF

Data sheet