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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SISH892BDN-T1-GE3
Vishay Siliconix

SISH892BDN-T1-GE3

Manufacturer Part Number SISH892BDN-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description N-CHANNEL 100 V (D-S) MOSFET POW
Package PowerPAK® SO-8DC
In Stock 286660 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100 500 1000
$0.335 $0.296 $0.227 $0.179 $0.144
Delivery Time Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Vishay Siliconix series electronic components. We have 286660 pieces of Vishay Siliconix SISH892BDN-T1-GE3 in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® SO-8DC
Series TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs 30.4mOhm @ 10A, 10V
Power Dissipation (Max) 3.4W (Ta), 29W (Tc)
Package / Case PowerPAK® SO-8
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 26.5 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Ta), 20A (Tc)

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SISH892BDN-T1-GE3 Datasheet PDF