SISA01DN-T1-GE3
| Manufacturer Part Number | SISA01DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Detailed Description | MOSFET P-CH 30V 22.4A/60A PPAK |
| Package | PowerPAK® 1212-8 |
| In Stock | 298816 pcs |
| Data sheet | New Solder Plating Site 18/Apr/2023Mult Dev 08/Dec/2022SISA01DN |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 |
|---|---|---|---|---|
| $0.341 | $0.301 | $0.23 | $0.182 | $0.146 |
Delivery Time
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RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Vgs (Max) | +16V, -20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® 1212-8 |
| Series | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 15A, 10V |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Package / Case | PowerPAK® 1212-8 |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 3490 pF @ 15 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 22.4A (Ta), 60A (Tc) |
| Base Product Number | SISA01 |
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