SIHF640S-GE3
Manufacturer Part Number | SIHF640S-GE3 |
---|---|
Manufacturer | Vishay Siliconix |
Detailed Description | MOSFET N-CH 200V 18A D2PAK |
Package | D²PAK (TO-263) |
In Stock | 98668 pcs |
Data sheet | IRF640S(L)/SIHF640S(L) |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 | 2000 | 5000 | 10000 |
---|---|---|---|---|---|---|---|
$0.851 | $0.763 | $0.613 | $0.504 | $0.418 | $0.389 | $0.374 | $0.365 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | D²PAK (TO-263) |
Series | - |
Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V |
Power Dissipation (Max) | 3.1W (Ta), 130W (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Package | Tube |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 200 V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Base Product Number | SIHF640 |
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