SIDR626DP-T1-RE3
Manufacturer Part Number | SIDR626DP-T1-RE3 |
---|---|
Manufacturer | Vishay Siliconix |
Detailed Description | N-CHANNEL 60-V (D-S) MOSFET |
Package | PowerPAK® SO-8DC |
In Stock | 66590 pcs |
Data sheet | SIDR626DP |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$1.111 | $0.997 | $0.817 | $0.696 | $0.587 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 3.4V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PowerPAK® SO-8DC |
Series | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs | 1.7mOhm @ 20A, 10V |
Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
Package / Case | PowerPAK® SO-8 |
Package | Tape & Reel (TR) |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 5130 pF @ 30 V |
Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 42.8A (Ta), 100A (Tc) |
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