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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIB412DK-T1-E3
Vishay Siliconix

SIB412DK-T1-E3

Manufacturer Part Number SIB412DK-T1-E3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 20V 9A PPAK SC75-6
Package PowerPAK® SC-75-6
In Stock 5779 pcs
Data sheet SIB412DK
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® SC-75-6
Series TrenchFET®
Rds On (Max) @ Id, Vgs 34mOhm @ 6.6A, 4.5V
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Package / Case PowerPAK® SC-75-6
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 10.16 nC @ 5 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Base Product Number SIB412

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SIB412DK-T1-E3 Datasheet PDF

Data sheet

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