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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI9410BDY-T1-GE3
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SI9410BDY-T1-GE3

Manufacturer Part Number SI9410BDY-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 30V 6.2A 8SO
Package 8-SOIC
In Stock 3908 pcs
Data sheet SIL-1072014 Rev0 17/Dec/2014SI9410BDY
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOIC
Series TrenchFET®
Rds On (Max) @ Id, Vgs 24mOhm @ 8.1A, 10V
Power Dissipation (Max) 1.5W (Ta)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6.2A (Ta)
Base Product Number SI9410

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SI9410BDY-T1-GE3 Datasheet PDF

Data sheet

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