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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI8429DB-T1-E1
Vishay Siliconix

SI8429DB-T1-E1

Manufacturer Part Number SI8429DB-T1-E1
Manufacturer Vishay Siliconix
Detailed Description MOSFET P-CH 8V 11.7A 4MICROFOOT
Package 4-Microfoot
In Stock 238789 pcs
Data sheet Material ComplianceSI8429DB
Reference Price (In US Dollars)
1 10 100 500 1000
$0.4 $0.358 $0.279 $0.23 $0.182
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 800mV @ 250µA
Vgs (Max) ±5V
Technology MOSFET (Metal Oxide)
Supplier Device Package 4-Microfoot
Series TrenchFET®
Rds On (Max) @ Id, Vgs 35mOhm @ 1A, 4.5V
Power Dissipation (Max) 2.77W (Ta), 6.25W (Tc)
Package / Case 4-XFBGA, CSPBGA
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 5 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 11.7A (Tc)
Base Product Number SI8429

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SI8429DB-T1-E1 Datasheet PDF

Data sheet