SI8401DB-T1-E3
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
1.4V @ 250µA
Vgs (Max)
±12V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
4-Microfoot
Series
TrenchFET®
Rds On (Max) @ Id, Vgs
65mOhm @ 1A, 4.5V
Power Dissipation (Max)
1.47W (Ta)
Package / Case
4-XFBGA, CSPBGA
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 4.5 V
FET Type
P-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.6A (Ta)
Base Product Number
SI8401
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SI8401DB-T1-E3 Datasheet PDF
Data sheet
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