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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI7615BDN-T1-GE3
Vishay Siliconix

SI7615BDN-T1-GE3

Manufacturer Part Number SI7615BDN-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET P-CH 20V 29A/104A PPAK
Package PowerPAK® 1212-8
In Stock 5225 pcs
Data sheet
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 1.5V @ 250µA
Vgs (Max) ±12V
Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Power Dissipation (Max) 5.2W (Ta), 66W (Tc)
Package / Case PowerPAK® 1212-8
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 4890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) -
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 104A (Tc)

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SI7615BDN-T1-GE3 Datasheet PDF

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