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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI4913DY-T1-E3
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SI4913DY-T1-E3

Manufacturer Part Number SI4913DY-T1-E3
Manufacturer Vishay Siliconix
Detailed Description MOSFET 2P-CH 20V 7.1A 8-SOIC
Package 8-SOIC
In Stock 5455 pcs
Data sheet PCN- SIL-0582013 05/Dec/2013SI4913DY
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 1V @ 500µA
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOIC
Series TrenchFET®
Rds On (Max) @ Id, Vgs 15mOhm @ 9.4A, 4.5V
Power - Max 1.1W
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs 65nC @ 4.5V
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 7.1A
Configuration 2 P-Channel (Dual)
Base Product Number SI4913

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SI4913DY-T1-E3 Datasheet PDF

Data sheet

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