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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4833BDY-T1-GE3
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SI4833BDY-T1-GE3

Manufacturer Part Number SI4833BDY-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET P-CHANNEL 30V 4.6A 8SOIC
Package 8-SOIC
In Stock 4631 pcs
Data sheet Multiple Devices 14/Mar/2018SI4833BDY
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOIC
Series LITTLE FOOT®
Rds On (Max) @ Id, Vgs 68mOhm @ 3.6A, 10V
Power Dissipation (Max) 2.75W (Tc)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
FET Type P-Channel
FET Feature Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc)
Base Product Number SI4833

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SI4833BDY-T1-GE3 Datasheet PDF

Data sheet

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