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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4660DY-T1-E3
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SI4660DY-T1-E3

Manufacturer Part Number SI4660DY-T1-E3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 25V 23.1A 8SO
Package 8-SOIC
In Stock 6451 pcs
Data sheet SI4660DY
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.2V @ 250µA
Vgs (Max) ±16V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOIC
Series TrenchFET®
Rds On (Max) @ Id, Vgs 5.8mOhm @ 15A, 10V
Power Dissipation (Max) 3.1W (Ta), 5.6W (Tc)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2410 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 23.1A (Tc)
Base Product Number SI4660

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SI4660DY-T1-E3 Datasheet PDF

Data sheet

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