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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4464DY-T1-E3
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SI4464DY-T1-E3

Manufacturer Part Number SI4464DY-T1-E3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 200V 1.7A 8SO
Package 8-SOIC
In Stock 181339 pcs
Data sheet New Solder Plating Site 18/Apr/2023
Reference Price (In US Dollars)
1 10 100 500 1000
$0.514 $0.459 $0.358 $0.296 $0.234
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOIC
Series TrenchFET®
Rds On (Max) @ Id, Vgs 240mOhm @ 2.2A, 10V
Power Dissipation (Max) 1.5W (Ta)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Base Product Number SI4464

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SI4464DY-T1-E3 Datasheet PDF

Data sheet

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